(China (Mainland))
Product Summary
The 1Gb DDR2 SDRAM K4T1G164QE-HCF7 is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device K4T1G164QE-HCF7 achieves high speed double-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications.
Parametrics
K4T1G164QE-HCF7 absolute maximum ratings: (1)Supply Voltage, VDD: 1.7 to 1.9V; (2)Supply Voltage for DLL, VDDL: 1.7 to 1.9V; (3)Supply Voltage for Output, VDDQ: 1.7 to 1.9V; (4)Input Reference Voltage, VREF: 0.49*VDDQ to 0.51*VDDQ mV; (5)Termination Voltage, VTT: VREF-0.04 to VREF+0.04V.
Features
K4T1G164QE-HCF7 features: (1)JEDEC standard VDD = 1.8V ± 0.1V Power Supply; (2)VDDQ = 1.8V±0.1V; (3)333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin; (4)8 Banks; (5)Posted CAS; (6)Programmable CAS Latency: 3, 4, 5, 6; (7)Programmable Additive Latenc y: 0, 1, 2, 3, 4, 5; (8)Write Latency(WL) = Read Latency(RL) -1; (9)Burst Length: 4 , 8(Interleave/nibble sequential); (10)Programmable Sequential / Interleave Burst Mode; (11)Bi-directional Differential Data-Strobe; (12)Off-Chip Driver(OCD) Impedance Adjustment; (13)On Die Termination; (14)Special Function Support; (15)Average Refresh Period 7.8us at lower than TCASE 85℃, 3.9us at 85℃ < TCASE < 95℃; (16)All of products are Lead-Free, Halogen-Free, and RoHS compliant.
Diagrams
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K4T1G044QM-ZCCC |
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K4T1G044QM-ZCD5 |
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