(China (Mainland))
Product Summary
The IS61WV25616BLL-10TLI is a high-speed, 4194304-bit static RAM organized as 262144 words by 16bits. The IS61WV25616BLL-10TLI is fabricated using ISSI’s hgih-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE is HIGH(deselected), the IS61WV25616BLL-10TLI assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.
Parametrics
IS61WV25616BLL-10TLI absolute maximum ratings: (1)terminal voltage with respect to GND:-0.5V to VDD+0.5V; (2)VDD relates to GND:-0.3V to 4.0V; (3)storage temperature:-65 to +150℃; (4)power dissipation:1.0W.
Features
IS61WV25616BLL-10TLI features: (1)high-speed access time:8, 10, 20ns; (2)low active power:85mW; (3)low standby power:7mW CMOS standby; (4)single power supply:2.4 to 3.6V; (5)fully static operation: no clock or refresh required; (6)three state outputs; (7)data control for uppear and low bytes; (8)industrial and automotive temperature support; (9)lead-free available.
Diagrams
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 IS61WV25616BLL-10TLI |
ISSI |
SRAM 4Mb 256Kx16 10ns Async SRAM 3.3v |
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IS61WV25616BLL-10TLI-TR |
ISSI |
SRAM 4Mb 256Kx16 10ns Async SRAM 3.3v |
Data Sheet |
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