(China (Mainland))
Product Summary
Hynix NAND HY27UF082G2B-TPCB has 256Mx8bit with spare 8Mx8 bit capacity. The HY27UF082G2B-TPCB is offered in 3.3V Vcc Power Supply, and with x8 and x16 I/O interface Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory of HY27UF082G2B-TPCB is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.
Parametrics
HY27UF082G2B-TPCB absolute maximum ratings: (1)supply voltage, 3.3V device: Vcc=2.7V to 3.6V; (2)memory cell array: (2K + 64) bytes x 64 pages x 2048 blocks; (3)page size: (2K + 64 spare) Bytes; (4)Random access: 25us (max.); (5)Sequential access: 25ns (min.); (6)Page program time: 200us (typ.); (7)Multi-page program time (2 pages): 200us (typ.).
Features
HY27UF082G2B-TPCB features: (1)Cost effective solutions for mass storage applications; (2)x8/x16 bus width.; (3)Address/ Data Multiplexing; (4)Pinout compatiblity for all densities.
Diagrams
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